Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys
Identifieur interne : 000068 ( Main/Exploration ); précédent : 000067; suivant : 000069Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys
Auteurs : RBID : ISTEX:10853_1996_Article_BF00367872.pdfAbstract
Electrical, optical and physico-chemical properties of disordered InxSe100−x thin films have been investigated for x ranging from 40–65. The films are found to be p-type for composition ranging from 45–60 at% selenium and n-type for compositions below 40 at% selenium. An increase in the conductivity, together with a decrease of the activation energy and of the optical gap, has also been observed when x varies from 40–65. These results have been interpreted through a theory based on the relative percentage evolution of the In-In and Se-Se chemical bonds and, on the other hand, by a percolation theory due to microcrystalline structures and indium filaments. These two models are discussed in reference to other publications.
DOI: 10.1007/BF00367872
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys</title><author><name>S. Marsillac</name><affiliation wicri:level="3"><mods:affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03</wicri:regionArea><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes cédex 03</settlement></placeName></affiliation></author><author><name>J. C. Bernéde</name><affiliation wicri:level="3"><mods:affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03</wicri:regionArea><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes cédex 03</settlement></placeName></affiliation></author><author><name>A. Conan</name><affiliation wicri:level="3"><mods:affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03</wicri:regionArea><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes cédex 03</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1996_Article_BF00367872.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF00367872</idno><idno type="wicri:Area/Main/Corpus">000694</idno><idno type="wicri:Area/Main/Curation">000694</idno><idno type="wicri:Area/Main/Exploration">000068</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Electrical, optical and physico-chemical properties of disordered InxSe100−x thin films have been investigated for x ranging from 40–65. The films are found to be p-type for composition ranging from 45–60 at% selenium and n-type for compositions below 40 at% selenium. An increase in the conductivity, together with a decrease of the activation energy and of the optical gap, has also been observed when x varies from 40–65. These results have been interpreted through a theory based on the relative percentage evolution of the In-In and Se-Se chemical bonds and, on the other hand, by a percolation theory due to microcrystalline structures and indium filaments. These two models are discussed in reference to other publications.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="76f8f277f53fe517e0eb82cd9639ebc59168a3f3"><titleInfo lang="eng"><title>Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys</title></titleInfo><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Marsillac</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</affiliation></name><name type="personal"><namePart type="given">J. C.</namePart><namePart type="family">Bernéde</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Conan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculté des Sciences et desTechniques de Nantes, Laboratoire de Physique des Matériaux pour l'Electronique, 2 rue de la Houssiniere, 44072, Nantes cédex 03, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1995-01-12</dateCreated><dateCaptured encoding="w3cdtf">1995-06-22</dateCaptured><dateValid encoding="w3cdtf">2004-09-08</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Electrical, optical and physico-chemical properties of disordered InxSe100−x thin films have been investigated for x ranging from 40–65. The films are found to be p-type for composition ranging from 45–60 at% selenium and n-type for compositions below 40 at% selenium. An increase in the conductivity, together with a decrease of the activation energy and of the optical gap, has also been observed when x varies from 40–65. These results have been interpreted through a theory based on the relative percentage evolution of the In-In and Se-Se chemical bonds and, on the other hand, by a percolation theory due to microcrystalline structures and indium filaments. These two models are discussed in reference to other publications.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>JOURNAL OF MATERIALS SCIENCE</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 31</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-01-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Mechanics</topic><topic>Materials Processing, Characterization, and Design</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 37</identifier><recordInfo><recordOrigin>Kluwer Academic Publishers, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00367872</identifier><identifier type="matrixNumber">Art4</identifier><identifier type="local">BF00367872</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>581</start><end>587</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1996</recordOrigin><recordIdentifier>10853_1996_Article_BF00367872.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000068 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000068 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:10853_1996_Article_BF00367872.pdf
|texte= Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys
}}
| This area was generated with Dilib version V0.5.81. |  |